Layout Design of a Fully Customized Deep Submicron Radiation-Tolerant LDO
Keywords:
Low dropout linear regulator; Large head strip grid; P + guard ring; Layout design technology; Radiation effects;Abstract
In order to improve the functional stability of low dropout regulator (LDO) in radiation environment, this paper proposes a radiation-resistant layout reinforcement technology suitable for deep submicron LDO. By using structures such as large-head strip gate and P + guard ring, combined with process reinforcement and layout design technology, the radiation resistance of the circuit is improved. The test results show that the designed LDO circuit has good power supply rejection ratio, high gain and fast transient response; the irradiation experiment of the circuit shows that the total ionizing radiation dose is greater than 300 krad (Si), the threshold of single event latch-up (SEL) is greater than 75 MeV·cm~2/mg, and the single event upset (SEU) error rate is less than 1×10 -10 error/(bit·day), which meets the radiation resistance requirements of deep submicron LDO.References
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Copyright (c) 2024 Zou Wenying, Zhang Yuhan, Li Xiaoqiang, Yang Pei (Author)
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