“Development of 340 GHz low noise amplifier chip based on 101.6 mm wafer 35 nm InP HEMT process” (2024) Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 44(2). Available at: https://www.rpsse.com/index.php/journal/article/view/3 (Accessed: 2 May 2025).