GaN Schottky diode with cutoff frequency of 1.2 THz and its frequency tripling monolithic integrated circuit

Abstract

By designing GaN low-doped epitaxial layers with different doping concentrations and thicknesses, two SiC-based GaN Schottky barrier diodes (SBDs) were fabricated. The results show that the cutoff frequency of the GaN SBD fabricated under the conditions of low-doping layer thickness of 80 nm and doping concentration of 8×10 ¹⁷ cm ^-3 is as high as 1.2 THz. Based on the SBD die, a balanced triple frequency monolithic integrated circuit was fabricated. At room temperature, the continuous wave saturated output power of the triple frequency circuit in the 305-330 GHz frequency band is greater than 10 mW, the maximum output power in the band is 25 mW, and the highest frequency doubling efficiency reaches 3.3%.