Research and Progress of Solid State Electronics

4H-SiC CMOS High Temperature Integrated Circuit Design and Manufacturing

Authors

  • Chen Haowei

    National Key Laboratory of Wide Bandgap Semiconductor Devices and Integration Technology, Nanjing Institute of Electronic Devices
    Author

  • Liu Ao

    National Key Laboratory of Wide Bandgap Semiconductor Devices and Integration Technology, Nanjing Institute of Electronic Devices
    Author

  • Baisong

    National Key Laboratory of Wide Bandgap Semiconductor Devices and Integration Technology, Nanjing Institute of Electronic Devices
    Author

  • Huang Runhua

    National Key Laboratory of Wide Bandgap Semiconductor Devices and Integration Technology, Nanjing Institute of Electronic Devices
    Author

Keywords:

Silicon carbide; CMOS; integrated circuit; Inverter; Ring oscillator;

Abstract

Lateral MOSFET devices and CMOS circuits based on silicon carbide materials were designed, manufactured, and tested. At room temperature, the threshold voltages of N-type and P-type MOSFETs tested on-chip were approximately 5.4 V and -6.3 V, respectively; when the temperature reached 300°C, the threshold voltages of N-type and P-type MOSFETs were 4.3 V and -5.3 V, respectively. The CMOS inverter composed of N-type and P-type MOSFETs has an output rise time of 1.44μs and a fall time of 2.17μs at room temperature, and can still work normally under high temperature conditions of 300°C. The ring oscillator cascaded by CMOS inverters has a test operating frequency of 147 kHz at room temperature, and can also work normally at high temperatures.   

References

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Published

2024-12-03

Issue

Vol. 44 No. 2 (2024)

Section

Articles

License

Copyright (c) 2024 Chen Haowei, Liu Ao, Baisong, Huang Runhua (Author)

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

How to Cite

4H-SiC CMOS High Temperature Integrated Circuit Design and Manufacturing. (2024). Guti Dianzixue Yanjiu Yu Jinzhan Research and Progress of Solid State Electronics, 44(2). https://www.rpsse.com/index.php/journal/article/view/10

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