Low-loss 4500 V/5000 A IGBT modules for flexible DC converter applications

Abstract

In order to meet the application requirements of the ever-increasing transmission capacity of flexible DC converters, high-power and low-loss IGBT modules for power grids have become a development trend. This paper introduces a 4 500 V/5 000 A IGBT module. Through the large-area IGBT cell design of self-aligned N-type enhancement layer, the static and dynamic performance of the multi-chip parallel press-fit module is improved. The terminal structure of P and N field limiting rings plus multi-level field plates ensures the high withstand voltage and low leakage of the module, and optimizes the chip process to adapt to the press-fit packaging requirements. The saturation voltage drop (V _CEsat ) of the packaged 4 500 V/5 000 A IGBT press-fit module at room temperature is 2.4 V; at a high temperature of 125°C, V _CEsat is 3.12 V, and the leakage current between the collector and the emitter is only 18.78 mA. When the frequency is 100-150 Hz, the total static and dynamic losses are about 2% lower than those of competing products, and the module has passed the short-circuit safe operating area test, reverse bias shutdown safe operating area test and reverse bias test at 125°C.