Layout Design of a Fully Customized Deep Submicron Radiation-Tolerant LDO
Keywords:
Low dropout linear regulator; Large head strip grid; P + guard ring; Layout design technology; Radiation effects;Abstract
In order to improve the functional stability of low dropout regulator (LDO) in radiation environment, this paper proposes a radiation-resistant layout reinforcement technology suitable for deep submicron LDO. By using structures such as large-head strip gate and P + guard ring, combined with process reinforcement and layout design technology, the radiation resistance of the circuit is improved. The test results show that the designed LDO circuit has good power supply rejection ratio, high gain and fast transient response; the irradiation experiment of the circuit shows that the total ionizing radiation dose is greater than 300 krad (Si), the threshold of single event latch-up (SEL) is greater than 75 MeV·cm~2/mg, and the single event upset (SEU) error rate is less than 1×10 -10 error/(bit·day), which meets the radiation resistance requirements of deep submicron LDO.References
[1] Circuit design of ultra-low quiescent current LDO [J]. Xia Xiaojuan, Hao Mengliang, Ding Yuting. Electronic Devices . 2021(04)
[2] Design of a high power supply rejection ratio LDO [J]. Shen Mengyuan, Liu Yuntao, Yang Lu. Information and Communication . 2020(03)
[3] Design of a high-stability LDO without external capacitors [J]. Huo Dexuan, Zhang Guojun. Application of Electronic Technology . 2020(01)
[4] Simulation study on single-particle effects of 0.13μm fully depleted silicon-on-insulator transistors [J]. Hua Zhengyong, Ma Yike, Yin Yanan, Zhou Xinjie, Chen Yao, Yao Jin, Zhou Xiaobin. Electronics and Packaging . 2019(08)
[5] Development of a radiation-hardened low-dropout linear regulator [J]. Yao Heping, Yang Lihong, Liu Zhi, Shi Yingxuan, Zhao Guangwei. Journal of Terahertz Science and Electronic Information . 2017(01)
[6] Radiation hardening design technology for bulk silicon CMOS integrated circuits [J]. Mi Dan, Zuo Lingling. Electronics and Packaging . 2016(09)
[7] Layout design of a 0.6μm SOI radiation-resistant operational amplifier [J]. Xu Jiali, Yang Yang, Huang Wengang. Microelectronics . 2013(03)
[8] Radiation effects and radiation hardening technology of deep submicron and nanoscale integrated circuits [D]. Li Tiehu. Xidian University 2018
[9] Radiation-resistant DAC chip LDO circuit and layout design [D]. Wei Yongzhe. Xidian University 2018
[10] A large-head strip-gate MOS tube layout reinforcement structure to resist total dose radiation effect [P]. Luo Jing, Wang Dong, Zou Wenying, Xue Zhongjie, Zhou Xinjie, Hu Yongqiang. Chinese patent: CN102412303A,
[11] A reverse-ratio or small-ratio NMOS tube layout structure resistant to total dose radiation effect [P]. Luo Jing, Xu Rui, Zou Wenying, Xue Zhongjie, Zhou Xinjie, Hu Yongqiang. Chinese patent: CN102412304A,
[12] Radiation-resistant integrated circuit design theory and methods[M]. Tsinghua University Press, Gao Wu, 2018
[13] Introduction to Radiation-Hardened Integrated Circuits[M]. Tsinghua University Press, Han Zhengsheng, 2011
[14] Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit [J] . Lee Min Su,Lee Hee Chul. IEEE Transactions on Nuclear Science . 2013 (4)
Published
Issue
Section
License
Copyright (c) 2024 Zou Wenying, Zhang Yuhan, Li Xiaoqiang, Yang Pei (Author)
This work is licensed under a Creative Commons Attribution 4.0 International License.
How to Cite
Similar Articles
- Chen Shangxuan, Lu Chengjian, Han Changxuan, Chen Zhuoheng, Research progress on terahertz phased array system design , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 1 (2024)
- Gao Dongyue, Maple Leaf, Zhang Dahua, Low-loss 4500 V/5000 A IGBT modules for flexible DC converter applications , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 2 (2024)
- Yang Yang, Research on the process technology of silicon-based low-loss slow-wave structure of terahertz traveling wave tube based on DRIE , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 1 (2024)
- Zhang Bo, Zhang Jicong, Dai Bingli, Bottlenecks and progress of large-scale terahertz phased array technology , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 1 (2024)
- Sun Yuan, Development of 340 GHz low noise amplifier chip based on 101.6 mm wafer 35 nm InP HEMT process , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 2 (2024)
- Chen Haowei, Liu Ao, Baisong, Huang Runhua, 4H-SiC CMOS High Temperature Integrated Circuit Design and Manufacturing , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 2 (2024)
- Cheng Haifeng, Research on radial power synthesis technology of terahertz gap waveguide , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 1 (2024)
- Yang Lianghe, Liu Jinlong, Li Chengming, Zheng Yuting, Mou Lianxi, Research progress in diamond color center control and optical resonators , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 2 (2024)
- Zhang Kai, Dai Kunpeng, GaN Schottky diode with cutoff frequency of 1.2 THz and its frequency tripling monolithic integrated circuit , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 1 (2024)
- Zhang Yan, He Shanliang, A high-precision foreground calibration method for 16-bit current-steering DAC , Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics: Vol. 44 No. 2 (2024)
You may also start an advanced similarity search for this article.